Dram constructions and electronic systems

ABSTRACT

The invention includes methods in which metal oxide dielectric materials are deposited over barrier layers. The barrier layers can comprise compositions of metal and one or more of carbon, boron and nitrogen, and the metal oxide of the dielectric material can comprise the same metal as the barrier layer. The dielectric material/barrier layer constructions can be incorporated into capacitors. The capacitors can be used in, for example, DRAM cells, which in turn can be used in electronic systems.

TECHNICAL FIELD

The invention pertains to capacitor constructions and methods of formingcapacitor constructions. The invention also pertains to methods offorming constructions comprising dielectric materials.

BACKGROUND OF THE INVENTION

There is a continuing interest to incorporate oxide dielectrics intosemiconductor constructions. Among the dielectrics that are ofparticular interest are those represented by the formula MO_(z), where Mrepresents a metal, O is oxygen, and z is a number greater than 0, andtypically less than or equal to 8. The metal can be a transition metal,such as, for example, hafnium, or a non-transition metal, such as, forexample, aluminum. The dielectric materials can be useful in, forexample, capacitor constructions.

A difficulty in utilizing metal oxide dielectrics (MO_(z)) is thatdiffusion can occur between the dielectric materials and structuresproximate to the dielectric materials, and such diffusion can adverselyaffect properties of the dielectric material and/or the structuresproximate to the dielectric material. For instance, if a conductivestructure comprises conductively-doped silicon and MO_(z) is formeddirectly on the conductively-doped silicon, oxygen from the MO_(z) caninteract with the silicon to oxidize the silicon. The oxidized siliconwill no longer have the desired conductive properties ofconductively-doped silicon.

The problems discussed above can be alleviated, and even prevented,through utilization of a metal nitride barrier layer. The metal nitridecan be represented as MN_(y), where M is metal, N is nitrogen, and y isa number greater than 0 and typically less than 8. The metal nitride isfrequently referred to as a diffusion barrier layer, as the metalnitride alleviates, and frequently even prevents, diffusion to and/orfrom a metal oxide dielectric. U.S. Pat. No. 5,741,721 describesexemplary structures in which metal oxide dielectric materials areformed over metal nitride barrier layers. U.S. Pat. No. 5,741,721specifically describes processes in which a metal nitride layer isformed over a semiconductor substrate, and subsequently a surface of themetal nitride layer is oxidized to form a metal oxide dielectricmaterial.

The processing described in U.S. Pat. No. 5,741,721 can be difficult toincorporate into various semiconductor fabrication processes.Accordingly, it would be desirable to develop alternative methods forforming metal oxide dielectric material adjacent diffusion barrierlayers.

SUMMARY OF THE INVENTION

In one aspect, the invention encompasses a method of forming aconstruction which includes a dielectric material. A layer comprisingone or more of MC_(x), MB_(q) and MN_(y) is formed, with M being ametal, and with q, x and y being numbers greater than 0. A dielectricmaterial comprising MO, is deposited over and directly against thelayer, with z being a number greater than 0. In particular aspects, thelayer and the dielectric material can comprise a metal (for example,hafnium or aluminum) in common.

In one aspect, the invention pertains to a method of forming a capacitorconstruction. A first electrically conductive material is formed over asemiconductor substrate. An intermediate layer is formed over the firstelectrically conductive material. The intermediate layer predominantlycomprises a composition of a metal and one or more of boron, nitrogenand carbon. A dielectric layer is deposited over and directly againstthe intermediate layer, with the dielectric layer predominantlycomprising a composition of the metal and oxygen. A second electricallyconductive material is formed over the dielectric layer. The secondelectrically conductive material is capacitively connected with thefirst electrically conductive material.

In one aspect, the invention encompasses a capacitor construction. Theconstruction includes a first electrically conductive material, and afirst intermediate layer over the first electrically conductivematerial. The first intermediate layer predominantly comprises acomposition of aluminum and one or more of boron, nitrogen and carbon. Adielectric material is over and directly against the first intermediatelayer. The dielectric material predominantly comprises a composition ofaluminum and oxygen. A second intermediate layer is over the dielectricmaterial, with the second intermediate layer predominantly comprisingthe composition of aluminum and one or more of boron, nitrogen andcarbon. A second electrically conductive material is over the secondintermediate layer. The second electrically conductive material iscapacitively connected with the first electrically conductive material.The capacitor construction can be incorporated into a dynamic randomaccess memory (DRAM) cell. The DRAM cell can be utilized in anelectronic system.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 is a diagrammatic cross-sectional view of a semiconductor waferfragment at a preliminary processing stage of an exemplary method of thepresent invention.

FIG. 2 is a view of the FIG. 1 wafer fragment shown as a processingstage subsequent to that of FIG. 1.

FIG. 3 is a view of the FIG. 1 wafer fragment shown at a processingstage subsequent to that of FIG. 2.

FIG. 4 is a view of the FIG. 1 water fragment shown at a processingstage subsequent to that of FIG. 3.

FIG. 5 is a diagrammatic cross-sectional view of an apparatus that canbe utilized for conducting a deposition in accordance with variousexemplary aspects of the present invention.

FIG. 6 is a diagrammatic view of a computer illustrating an exemplaryapplication of the present invention.

FIG. 7 is a block diagram showing particular features of the motherboardof the FIG. 6 computer.

FIG. 8 is a high-level block diagram of an electronic system accordingto an exemplary aspect of the present invention.

FIG. 9 is a simplified block diagram of an exemplary electronic systemaccording to an aspect of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This disclosure of the invention is submitted in furtherance of theconstitutional purposes of the U.S. Patent Laws “to promote the progressof science and useful arts” (Article 1, Section 8).

The invention includes structures in which a layer comprising metalcarbide, metal boride and/or metal nitride is provided proximate a metaloxide dielectric material. The metal carbide can be referred to asMC_(x), where M is a metal, C is carbon, and x is a number greater than0 and typically less than 8; the metal boride can be referred to asMB_(q), where M is metal, B is boron, and q is a number greater than 0and typically less than 8; the metal nitride can be referred to asMN_(y), where M is a metal, N is nitrogen, and y is a number greaterthan 0 and typically less than 8; and the metal oxide can be referred toas MO_(z), where M is a metal, O is oxygen, and z is a number greaterthan 0 and typically less than 8.

The metal oxide dielectric material has a metal in common with the layercomprising metal carbide, metal boride and/or metal nitride, and suchcan improve stacking of the dielectric material when the dielectricmaterial is directly against the layer comprising metal carbide, metalboride and/or metal nitride. The layer comprising metal carbide, metalboride and/or metal nitride can be a barrier layer between the metaloxide dielectric material and another material, and/or can be anucleation layer utilized for growth of the metal oxide dielectricmaterial in a deposition process. Exemplary metals of the metal oxide,metal carbide, metal boride and metal nitride include aluminum, hafniumand lanthanide metals, with the lanthanide metals including lanthanumand the elements of the lanthanide series for purposes of interpretingthis disclosure and the claims that follow.

The invention includes methods of forming the layer comprising metalcarbide, metal boride and/or metal nitride together with the metal oxidedielectric layer. The invention also includes constructions utilizingthe layer comprising metal nitride, metal boride and/or metal carbide incombination with the metal oxide dielectric layer, with exemplaryconstructions being capacitor constructions.

An exemplary process of the present invention is described withreference to FIG. 1-5. The exemplary process fabricates an exemplarycapacitor construction.

Referring to FIG. 1, a semiconductor wafer fragment 10 is illustrated ata preliminary processing stage of the exemplary process of the presentinvention. Fragment 10 comprises a semiconductor substrate 12. Substrate12 can comprise, for example, monocrystalline silicon lightly doped withbackground p-type dopant. To aid in interpretation of the claims thatfollow, the terms “semiconductive substrate” and “semiconductorsubstrate” are defined to mean any construction comprisingsemiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials thereon), and semiconductivematerial layers (either alone or in assemblies comprising othermaterials). The term “substrate” refers to any supporting structure,including, but not limited to, the semiconductive substrates describedabove.

A transistor device 14 is shown supported by substrate 12. Device 14comprises a pair of source/drain regions 16 and 18 extending intosubstrate 12. The source/drain regions each include a heavily dopedregion 20 extending relatively deep into substrate 12 and a lightlydoped region 22 extending less deep into substrate 12 than the heavilydoped region. A channel region 24 is between source/drain regions 16 and18, and a transistor gate 26 is over the channel region. Transistor gate26 includes an insulative material 28 (which can be, for example,silicon dioxide, and can be referred to as gate oxide), a conductivematerial 30 over the insulative material (the conductive material cancomprise one or more layers, and in particular aspects will compriseconductively-doped silicon and/or various metals), and an electricallyinsulative cap 32 over the conductive material (the insulative cap 32can comprise, for example, silicon nitride and/or silicon dioxide).

A pair of sidewall spacers 34 and 36 extend along sidewalls of gate 26and over lightly-doped regions 22. Spacers 34 and 36 can comprise anysuitable electrically insulative material, including, for example,silicon dioxide and/or silicon nitride. Transistor structure 14 is anexemplary conventional structure, and can be fabricated usingconventional methodologies. Other transistor structures can be utilizedin place of transistor structure 14.

An electrically conductive pedestal 38 is provided over source/drainregion 16. Pedestal 38 can comprise any suitable electrically conductivematerial, including, for example, conductively-doped silicon and/orvarious metals. Pedestal 38 has an upper surface 40 which defines anelectrical node. It is to be understood that pedestal 38 is optional. Ifpedestal 38 is eliminated, then the electrical node can be considered tobe an upper surface of the diffusion region corresponding tosource/drain region 16.

An electrically insulative material 42 is provided over transistor 14,and an opening 44 is formed through insulative material 42 to exposeelectrical node 40. Insulative material 42 can comprise any suitablematerial, including, for example, borophosphosilicate glass (BPSG).

Referring to FIG. 2, an electrically conductive material 46 is providedover an upper surface of insulative material 42 and within opening 44.Electrically conductive material 46 can ultimately be utilized as acapacitor electrode in a capacitor construction formed in accordancewith an exemplary aspect of the invention. Conductive material 46 cancomprise any suitable electrically conductive material, including, forexample, conductively-doped silicon and/or various metals. If material46 comprises metals, the metals can be utilized either in elementalform, or as conductive compounds. Layer 46 can be referred to as a firstelectrically conductive material in the discussion that follows, todistinguish layer 46 from conductive materials formed subsequent tolayer 46.

Although layer 46 is shown having a smooth outer surface, it is to beunderstood that layer 46 can also have a roughened (or rugged) outersurface in particular aspects of the invention. For instance, if layer46 comprises conductively-doped silicon, the outer surface of layer 46can correspond to hemispherical grain silicon, and accordingly would bea rugged surface.

A barrier layer 48 is formed over conductive material 46. Barrier layer48 comprises one or more of metal carbide (MC_(x)), metal boride(MB_(q)) and metal nitride (MN_(y)). The metal of barrier layer 48 cancomprise a transition metal (such as, for example, hafnium, titanium,tantalum, lanthanides, etc.) or a non-transition metal (such as, forexample, aluminum, etc.). Barrier layer 48 is shown to be electricallyconductive, but it is to be understood that layer 48 could alternativelybe electrically insulative. The conductivity of layer 48 depends on theparticular metal composition utilized in the layer, and it is to beunderstood that some metal carbides and/or metal nitrides suitable forutilization in layer 48 would be electrically insulative rather thanelectrically conductive. If layer 48 is electrically conductive, layer46 can be omitted in some aspects of the invention. If layer 46 isomitted, material 48 can physically contact electrical node 40.

Layer 48 is referred to above as a “barrier” as layer 48 is preferably abarrier which prevents reaction between substances associated with adielectric material (described below) provided on one side of layer 48with substances from other structures (such as, for example, the shownlayer 46) provided on the other side of layer 48. It is to beunderstood, however, that the invention encompasses aspects in whichlayer 48 is utilized for other physical characteristics alternativelyto, or in addition to, the barrier properties of the layer. Forinstance, the dielectric material formed over layer 48 typicallycomprises a metal oxide having a metal in common with the metal nitride,metal boride and/or metal carbide of layer 48. Layer 48 can be utilizedfor the preferred stacking characteristics of having a metal in commonbetween a metal oxide dielectric material and an underlying metalnitride, metal boride and/or metal carbide material. Layer 48 can bereferred to as an intermediate layer in the discussion that follows,rather than as a barrier layer, and in other aspects of the descriptionthat follows, layer 48 can be referred to as a diffusion barrier layer.

Layer 48 can have any suitable composition of metal carbide, metalboride and/or metal nitride. In particular aspects, layer 48 willconsist essentially of, or consist of metal carbide; in other aspectslayer 48 will consist essentially of, or consist of metal boride; and inother aspects, layer 48 will consist essentially of, or consist of metalnitride. In specific applications, layer 48 can comprise, consistessentially of, or consist of hafnium carbide and/or hafnium nitride. Inother aspects, layer 48 can comprise, consist essentially of, or consistof aluminum carbide and/or aluminum nitride. In yet other aspects, layer48 can comprise, consist essentially of, or consist of one or morelanthanide metal carbides and/or one or more lanthanide metal nitrides.It is emphasized, however, that the metal utilized in layer 48 can beany suitable metal, including, for example, hafnium, lanthanide metalsor aluminum; but is not limited to the exemplary metals of hafnium,aluminum and lanthanide metals.

Layer 48 can comprise any suitable thickness, and typically wouldcomprise a thickness of from about 5 Å to about 200 Å. Layer 48 can beformed by any suitable method, and typically would be formed utilizingchemical vapor deposition (CVD) and/or atomic layer deposition (ALD).

Although only one layer 48 is shown, it is to be understood thatmultiple layers comprising metal carbide, metal boride and/or metalnitride could be formed. If multiple layers are formed, the metalswithin the multiple layers can vary within the stack of multiple layers.In processing described below, a material oxide is formed over the oneor more layers comprising metal nitride, metal boride and/or metalcarbide. The top layer of a stack of multiple layers of metal nitride,metal boride and/or metal carbide will preferably have a metal in commonwith the metal oxide contacting such top layer.

Referring to FIG. 3, layers 46 and 48 are removed from over an uppersurface of insulative material 42, while being retained within opening44. A suitable process for removing layers 46 and 48 from over the uppersurface of insulative material 42 can be, for example,chemical-mechanical polishing.

Referring next to FIG. 4, a layer of dielectric material 50 is depositedover the upper surface of insulative material 42 and over a surface ofbarrier layer 48 within opening 44. Dielectric material 50 can be formeddirectly against an upper surface of layer 48, as shown. Layer 50comprises metal oxide (MO_(z)) and has at least one metal in common withthe metal nitride (MN_(y)), metal boride (MB_(q)) and/or metal carbide(MC_(x)) of layer 48. Layer 50 can, for example, consist of a singlemetal oxide which has a metal in common with metal of layer 48; orcomprise multiple metal oxides, of which only a subset has metal incommon with one or more metals of layer 48; or can comprise multiplemetal oxides of which all have metal in common with metals of layer 48.In particular exemplary aspects, layer 48 can comprise, consistessentially of, or consist of one or both of hafnium nitride and hafniumcarbide, and layer 50 can comprise, consist essentially of, or consistof hafnium oxide. In other exemplary aspects, layer 48 can comprise,consist essentially of, or consist of one or more lanthanide metalnitrides and/or one or more lanthanide metal carbides, and layer 50 cancomprise, consist essentially of, or consist of one or more lanthanidemetal oxides. In other exemplary aspects, layer 48 can comprise, consistessentially of, or consist of aluminum nitride and/or aluminum carbide,and layer 50 can comprise, consist essentially of, or consist ofaluminum oxide. In another exemplary aspect, layer 48 can predominantlycomprise a composition of a metal and nitrogen, boron or carbon, withthe term “predominantly comprise” indicating that more than 50 atomicpercent of the layer is the stated composition. In such aspect,dielectric material 50 can predominantly comprise a composition of themetal and oxygen. Dielectric material 50 is typically formed to athickness of from about 20 Å to about 60 Å.

Although only one layer 50 is shown, it is to be understood thatmultiple layers comprising metal oxide could be formed. If multiplelayers are formed, the metals within the multiple layers can vary withinthe stack of multiple layers. The bottom layer of a stack of multiplelayers of metal oxide (i.e., the layer of the metal oxide stack that isin contact with metal carbide, metal boride and/or metal nitride oflayer 48) will preferably have a metal in common with the metal carbide,metal boride and/or metal nitride contacting such bottom layer.

In some aspects of the invention, metal oxide layer 50 can be formed ina common deposition process with the metal nitride, metal boride and/ormetal carbide of layer 48. In such aspects, the processing of FIG. 3 isomitted (specifically, layers 46 and 48 are not patterned prior toformation of dielectric material 50). In an exemplary process, layer 48is formed utilizing one or both of CVD and ALD in reaction chamber, andsubsequently dielectric material 50 is deposited utilizing one or bothof CVD and ALD in situ in the same reaction chamber utilized fordeposition of layer 48. The term “in situ” is utilized to indicate thatvacuum to the reaction chamber is not broken between the deposition oflayer 48 and the deposition of layer 50.

Since layers 48 and 50 have a metal in common, the deposition of layers48 and 50 can occur in a continuous and uninterrupted process.Specifically, the deposition of layer 48 can occur by flowing ametal-containing precursor into a reaction chamber in combination withprecursors of one or more of carbon, boron and nitrogen. After layer 48has been formed to a desired thickness, the flow of nitrogen, boronand/or carbon precursor is replaced by a flow of oxygen precursor toinitiate formation of layer 50. If the processing utilized for formationof layer 48 is an ALD process, then layer 48 can be formed utilizing areaction sequence in which metal-containing precursor is flowed into areaction chamber in an alternating sequence with carbon, boron and/ornitrogen precursors to build up layers of desired metal nitride, metalboride and/or metal carbide materials. After layer 48 is built to adesired thickness, the flow of nitrogen, boron and/or carbon precursorcan be replaced with a flow of oxygen precursor. The metal precursor canthen be flowed in an alternating sequence with the oxygen precursor tothe build up layers of dielectric material 50.

An exemplary reaction chamber which can be utilized for chemical vapordeposition and/or atomic layer deposition is described with reference toFIG. 5. Specifically, FIG. 5 shows a cross-sectional view of anapparatus 100 comprising a reaction chamber 102. A wafer holder 104 isprovided within the reaction chamber, and is shown supporting asemiconductor wafer substrate 106. Chamber 100 has an inlet 108extending into reaction chamber 102 and an outlet 110 extending from thereaction chamber. Inlet 108 and outlet 110 are controllably blocked withvalves 112 and 114, respectively.

In operation, precursor is flowed into chamber 102 through inlet 108 (asrepresented by an arrow 116 in the diagram of FIG. 5), and is utilizedto form a desired layer (not shown) over exposed surfaces of substrate106. At appropriate times, reaction by-products and/or unreactedprecursor is removed from chamber 102 through outlet 110 (as indicatedby arrow 118 in the diagram of FIG. 5). In a CVD process, two or moreprecursors would be introduced into reaction chamber 102 to react withone another and form a desired layer over substrate 106. In an ALDprocess, the precursors would be introduced sequentially into reactionchamber 102, and would be provided within the chamber separate from oneanother. Accordingly, in an ALD process there would be no reaction (orat least no detectable reaction) of precursors with one another inchamber 102, but rather the precursors would be utilized to build upmonolayers over a surface of substrate 106.

Referring again to FIG. 4, a second barrier layer 52 is formed overdielectric material 50. Second barrier layer 52 can, like the firstbarrier layer 48, comprise metal nitride, metal boride and/or metalcarbide, and can have a metal in common with dielectric material 50. Inparticular aspects, second barrier layer 52 comprises an identicalcomposition to first barrier layer 48. Layer 52 can, like layer 48, bereferred to as an intermediate layer, rather than as a barrier layer, toemphasize that layer 52 can be utilized for other properties in additionto, or alternatively to, its barrier properties.

Layer 52 is shown as a conductive layer, but it is to be understood thatlayer 52 can alternatively be electrically insulative depending on theparticular composition utilized in layer 52.

Layer 52 can be formed in a CVD and/or ALD process common to thatutilized for layer 50. In other words, layer 52 can be formed in thesame reaction chamber utilized for deposition of layer 50, and inparticular aspects, will be formed in situ relative to layer 50 in acontinuous process relative to that utilized for forming layer 50. Insome aspects of the invention, layers 48, 50 and 52 can all be formed ina continuous deposition process (such as, for example, a depositionprocess utilizing CVD and/or ALD). Specifically, all of layers 48, 50and 52 can be formed in a common reaction chamber without breaking avacuum to the chamber from the time that deposition of layer 48 isstarted until the time that deposition of layer 52 is completed.

A second electrically conductive electrode 54 is formed over layer 52.Electrode 54 can comprise, consist essentially of, or consist ofconductively-doped silicon and/or various metals and/or metalcompositions. In aspects in which layer 52 is electrically conductive,layer 54 can be omitted, and layer 52 can be utilized as the secondelectrode. However, even when layer 52 is electrically conductive it canbe advantageous to form layer 52 relatively thin (such as, for example,to a thickness from about 5 Å to about 200 Å), and to use layer 52 incombination with another conductive material 54 as a capacitorelectrode.

Layers 46, 48, 50, 52 and 54 together define a capacitor construction60. Conductive materials 46 and 48 can be considered to be a firstelectrode of the capacitor, and conductive materials 52 and 54′ can beconsidered to be a second electrode of the capacitor. The secondelectrode is capacitively connected to the first electrode, and spacedfrom the first electrode by dielectric material 50. In constructions inwhich layers 48 and 52 comprise dielectric materials, the layers 48, 50and 52 can together be a dielectric material separating a firstcapacitor electrode defined by layer 46 from a second capacitorelectrode defined by layer 54.

Capacitor construction 60 can be incorporated into a DRAM cell.Specifically, the source/drain region 18 can be connected to a bitline70. Capacitor construction 60 can thus be gatedly connected with bitline70 through transistor 14.

The present approach can provide numerous advantages. For instance, thepresent invention can provide the ability to do high temperature oxidedepositions (which can give denser, better quality oxide films) sincethe deposition can start with reducing chemistry that will not oxidizethe bottom cell plate (i.e., that will not oxidize electrode 46). Afterthe bottom oxygen barrier (nitride, boride and/or carbide) is deposited(i.e., after deposition of layer 48), the chemistry can be changed to anoxidizing one and the dielectric deposition can be conducted to formmaterial 50. Methodology of the present invention can additionallyenable a good lattice match to be obtained between a nitride, borideand/or a carbide layer relative to a metal oxide material. Also, thelayer 48 can prevent oxidation of underlying layer 46 which otherwiseoccur if layer 50 were provided directly against layer 46. Additionally,it is noted that in applications in which aluminum oxide is utilized asthe dielectric material, and aluminum carbide and/or nitride is utilizedfor layers 48 and 52, the layers 48 and 52 will be electricallyinsulative. The permittivity of layers 48 and 52 will be comparable tothat of the aluminum oxide layer 50, which can allow a better qualitydielectric material (better permittivity) to be obtained than can beobtained utilizing other insulative nitrides, such as, for example,silicon nitride.

It is noted that the thickness of the nitride, boride and/or carbidelayers 48 and 52 can vary according to a desired use, or combination ofuses of the layers. For instance, if layers 48 and 52 are utilized asthe sole electrodes of a capacitor construction, the layers arepreferably formed relatively thick (i.e., have a thickness greater thanabout 50 Å). In contrast, if the layers are utilized in combination withother conductive materials in capacitor electrodes, the layers can beformed very thin, such as, for example, to a thickness of less thanabout 10 Å, and even to a thickness of less than about 5 Å.

Devices comprising constructions formed in accordance with methodologyof the present invention (such as the above-described DRAM cell) can beutilized in numerous assemblies, including, for example, computersystems and other electronic systems.

FIG. 6 illustrates generally, by way of example, but not by way oflimitation, an embodiment of a computer system 400 according to anaspect of the present invention. Computer system 400 includes a monitor401 or other communication output device, a keyboard 402 or othercommunication input device, and a motherboard 404. Motherboard 404 cancarry a microprocessor 406 or other data processing unit, and at leastone memory device 408. Memory device 408 can comprise various aspects ofthe invention described above, including, for example, the DRAM celldescribed with reference to FIG. 4. Memory device 408 can comprise anarray of memory cells, and such array can be coupled with addressingcircuitry for accessing individual memory cells in the array. Further,the memory cell array can be coupled to a read circuit for reading datafrom the memory cells. The addressing and read circuitry can be utilizedfor conveying information between memory device 408 and processor 406.Such is illustrated in the block diagram of the motherboard 404 shown inFIG. 7. In such block diagram, the addressing circuitry is illustratedas 410 and the read circuitry is illustrated as 412.

In particular aspects of the invention, memory device 408 can correspondto a memory module. For example, single in-line memory modules (SIMMs)and dual in-line memory modules (DIMMs) may be used in theimplementation which utilizes the teachings of the present invention.The memory device can be incorporated into any of a variety of designswhich provide different methods of reading from and writing to memorycells of the device. One such method is the page mode operation. Pagemode operations in a DRAM are defined by the method of accessing a rowof a memory cell arrays and randomly accessing different columns of thearray. Data stored at the row and column intersection can be read andoutput while that column is accessed.

An alternate type of device is the extended data output (EDO) memorywhich allows data stored at a memory array address to be available asoutput after the addressed column has been closed. This memory canincrease some communication speeds by allowing shorter access signalswithout reducing the time in which memory output data is available on amemory bus. Other alternative types of devices include SDRAM, DDR SDRAM,SLDRAM, VRAM and Direct RDRAM, as well as others such as SRAM or Flashmemories.

FIG. 8 illustrates a simplified block diagram of a high-levelorganization of various embodiments of an exemplary electronic system700 of the present invention. System 700 can correspond to, for example,a computer system, a process control system, or any other system thatemploys a processor and associated memory. Electronic system 700 hasfunctional elements, including a processor or arithmetic/logic unit(ALU) 702, a control unit 704, a memory device unit 706 and aninput/output (I/O) device 708. Generally, electronic system 700 willhave a native set of instructions that specify operations to beperformed on data by the processor 702 and other interactions betweenthe processor 702, the memory device unit 706 and the I/O devices 708.The control unit 704 coordinates all operations of the processor 702,the memory device 706 and the I/O devices 708 by continuously cyclingthrough a set of operations that cause instructions to be fetched fromthe memory device 706 and executed. In various embodiments, the memorydevice 706 includes, but is not limited to, random access memory (RAM)devices, read-only memory (ROM) devices, and peripheral devices such asa floppy disk drive and a compact disk CD-ROM drive. One of ordinaryskill in the art will understand, upon reading and comprehending thisdisclosure, that any of the illustrated electrical components arecapable of being fabricated to include DRAM cells in accordance withvarious aspects of the present invention.

FIG. 9 is a simplified block diagram of a high-level organization ofvarious embodiments of an exemplary electronic system 800. The system800 includes a memory device 802 that has an array of memory cells 804,address decoder 806, row access circuitry 808, column access circuitry810, read/write control circuitry 812 for controlling operations, andinput/output circuitry 814. The memory device 802 further includes powercircuitry 816, and sensors 820, such as current sensors for determiningwhether a memory cell is in a low-threshold conducting state or in ahigh-threshold non-conducting state. The illustrated power circuitry 816includes power supply circuitry 880, circuitry 882 for providing areference voltage, circuitry 884 for providing the first wordline withpulses, circuitry 886 for providing the second wordline with pulses, andcircuitry 888 for providing the bitline with pulses. The system 800 alsoincludes a processor 822, or memory controller for memory accessing.

The memory device 802 receives control signals 824 from the processor822 over wiring or metallization lines. The memory device 802 is used tostore data which is accessed via I/O lines. It will be appreciated bythose skilled in the art that additional circuitry and control signalscan be provided, and that the memory device 802 has been simplified tohelp focus on the invention. At least one of the processor 822 or memorydevice 802 can include a DRAM cell of the type described previously inthis disclosure.

The various illustrated systems of this disclosure are intended toprovide a general understanding of various applications for thecircuitry and structures of the present invention, and are not intendedto serve as a complete description of all the elements and features ofan electronic system using memory cells in accordance with aspects ofthe present invention. One of ordinary skill in the art will understandthat the various electronic systems can be fabricated in single-packageprocessing units, or even on a single semiconductor chip, in order toreduce the communication time between the processor and the memorydevice(s).

Applications for memory cells can include electronic systems for use inmemory modules, device drivers, power modules, communication modems,processor modules, and application-specific modules, and may includemultilayer, multichip modules. Such circuitry can further be asubcomponent of a variety of electronic systems, such as a clock, atelevision, a cell phone, a personal computer, an automobile, anindustrial control system, an aircraft, and others.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1-79. (canceled) 80: A DRAM construction, comprising: a transistorcomprising a pair of source/drain regions; and a capacitor electricallycoupled to one of the source/drain regions; the capacitor including: afirst electrically conductive material; a first intermediate layer overthe first electrically conductive material; the first intermediate layerpredominantly comprising a composition of aluminum and one or more ofnitrogen, boron and carbon; a dielectric material over and directlyagainst the first intermediate layer, the dielectric materialpredominantly comprising a composition of aluminum and oxygen; a secondintermediate layer over the dielectric material; the second intermediatelayer predominantly comprising the composition of aluminum and one ormore of boron, nitrogen and carbon; and a second electrically conductivematerial over the second intermediate layer; the second electricallyconductive material being capacitively connected with the firstelectrically conductive material. 81: The DRAM construction of claim 80wherein the second intermediate layer physically contacts the dielectricmaterial. 82: The DRAM construction of claim 80 wherein the secondelectrically conductive material physically contacts the secondintermediate layer. 83: The DRAM construction of claim 80 wherein thefirst and second intermediate layers consist essentially of aluminumcarbide. 84: The DRAM construction of claim 80 wherein the first andsecond intermediate layers consist essentially of aluminum boride. 85:The DRAM construction of claim 80 wherein the first and secondintermediate layers consist essentially of aluminum nitride. 86: Anelectronic system comprising: a processor electrically coupled withmemory; at least one of the processor and the memory including acapacitor which comprises: a first electrically conductive material; afirst intermediate layer over the first electrically conductivematerial; the first intermediate layer predominantly comprising acomposition of aluminum and one or more of nitrogen, boron and carbon; adielectric material over and directly against the first intermediatelayer, the dielectric material predominantly comprising a composition ofaluminum and oxygen; a second intermediate layer over the dielectricmaterial; the second intermediate layer predominantly comprising thecomposition of aluminum and one or more of boron, nitrogen and carbon;and a second electrically conductive material over the secondintermediate layer; the second electrically conductive material beingcapacitively connected with the first electrically conductive material.87: The electronic system of claim 86 wherein the second intermediatelayer physically contacts the dielectric material. 88: The electronicsystem of claim 86 wherein the second electrically conductive materialphysically contacts the second intermediate layer. 89: The electronicsystem of claim 86 wherein the first and second intermediate layersconsist essentially of aluminum carbide. 90: The electronic system ofclaim 86 wherein the first and second intermediate layers consistessentially of aluminum boride. 91: The electronic system of claim 86wherein the first and second intermediate layers consist essentially ofaluminum nitride.